New-Tech Europe Magazine | Aug 2018

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With its new 1Tb 4-bit V-NAND chip, Samsung will be able to efficiently produce a 128GB memory card for smartphones that will lead the charge toward higher capacities for high-performance memory storage. Typically, as data stored within a memory cell increases from three bits to four, the chip capacity per unit area would rise and the electrical charge (used to determine information from a sensor) would decrease by as much as 50 percent, making it considerably more difficult to maintain a device’s desired performance and speed. However, Samsung’s 4-bit 4TB QLC SATA SSD maintains its performance levels at the same level as a 3-bit SSD, by using a 3-bit SSD controller and TurboWrite technology, while increasing drive capacity through the use of 32 chips, all based on 64-layer fourth-generation 1Tb V-NAND.* The 4-bit QLC SSD enables a sequential read speed of 540 MB/s and a sequential write speed of 520 MB/s, and comes with a three-year warranty. Samsung plans to introduce several 4-bit consumer SSDs later this year with 1TB, 2TB, and 4TB capacities in the widely used 2.5-inch form factor. Since introducing the 32-gigabyte (GB) 1-bit SSD in 2006, which ushered in the PC SSD era, to today’s 4TB 4-bit SSD, Samsung continues to drive new thresholds for each multi-bit generation.** In addition, the company expects to provide M.2 NVMe SSDs for the enterprise this year and begin mass production of 4-bit fifth-generation V-NAND. This will considerably expand its SSD lineup to meet the growing demand for faster, more reliable performance across a wide span of applications, such as next generation data centers, enterprise servers, and enterprise storage. *1Tb (128GB) x 32 = 4TB (4,096GB) **Samsung’s mass production history of SSDs in bits per cell

STMicroelectronics Expands Presence in Ultrasound Market with High-Performance 16-Channel Pulser Targeting key medical and industrial applications, STMicroelectronics has launched a new high-voltage, compact, robust and cost-effective transmission pulser solution, built using ST’s proven BCD8s-SOI technology that supports analog (Bipolar), digital (CMOS), and power (DMOS) circuits on the same die. The STHV1600 provides a valuable solution for high-end cart systems and ultra-portable ultrasound equipment, while reinforcing ST’s existing portfolio of 4- and 8-channel pulser transmitters for medical and industrial ultrasound applications. To assure the smallest size, the state-of-the-art STHV1600 transmission (TX) pulser integrates high-resolution beamforming for its 16 independent channels. Offering the capability to program code excitation allows users to implement high voltage stages and store the patterns in memory. For maximum flexibility, each channel can support up to five output levels and the output stages can provide up to ±2A peak output current, independent from the high- voltage power-supply pins. The STHV1600 includes several global blocks including thermal protection for the logic and for each channel, under-voltage protection, and self-biased high-voltage MOSFET gate drivers with internal checks. Moreover, the IC includes 65 kbits of embedded memory to store pattern-control settings. The STHV1600 (in a 144-ball 10×10 TFBGA) is in production and currently sampling to lead customers. An evaluation board for the STHV1600, STEVAL- IME014V1 is currently available to select customers. Please contact your ST sales office.

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