New-Tech Europe Magazine | November 2018

mputers

C Components Electro Optic & Camera Packaging & Producti

New Products Automotive

IoT

IoT Computers Components Computers Electro Optic & Camera Packaging & Production Motion Automotive New Products manufacturing process node based FFSA™ (Fit Fast Structured Array), an innovative custom SoC development platform featuring high performance, low cost and low power consumption[1]. Toshiba provides ASIC (Application Specific IC) and FFSA™ platforms that suit the customer’s business environment and requirements, that also deliver efficient solutions for custom SoC development. FFSA™ devices use a silicon-based master slice which is common in combination with upper metal layers that are reserved for customization. By customizing only a few masks, FFSA™ offers much lower NRE costs than individual ASIC development. It also enables significant reductions in development cost and provides samples and mass-production in a short period of time than for conventional ASIC’s. Additionally, FFSA™ enables higher performance and lower power consumption than FPGA (Field Programmable Gate Array) using ASIC design methodology and its library. [1] The 130nm process series joins Toshiba’s current 28nm, 40nm, and 65nm process portfolio making FFSA™ a suitable option for the growing industrial equipment market. The 130nm FFSA™ devices designed on the platform will be manufactured by Japan Semiconductor, a subsidiary of Toshiba Electronic Devices & Storage Corporation with a long and proven history of expertise in manufacturing ASIC, ASSP and microcomputers. This will ensure long-term supply and meet the needs of customer business continuity plans. The new series deliver the performance and integration needed for industrial apparatus, communication facilities, OA equipment and consumer products where steady market expansion is expected.

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a smart phone or tablet. Exclusive new features of the switch include the absence of a buck/boost converter for simplified design-in and improved performance, as well as a smart dimming function. The technology developed by ZF captures the energy transferred when a user presses a button. The switch converts energy from kinetic to electromagnetic, and stores it for use by the RSL10 SIP. Each time the button is pressed the fully integrated energy harvesting solution generates 300 μJ. This is enough to meet the extremely low power requirements of the RSL10 SIP, which is just 62.5nW in deep sleep and only 10 mW when transceiving. Wiren Perera, who heads IoT at ON Semiconductor said: “Energy harvesting is becoming increasingly important for IoT deployments since it eliminates the need for power delivery, battery costs and replacement costs coupled with its inherent eco-friendliness. Based on the industry’s lowest power Bluetooth radio, the Energy Harvesting Bluetooth Low Energy Switch is the perfect starting point for self-powered Bluetooth IoT applications. Along with the reference hardware design, ON Semiconductor provides a firmware suite, which can be customized using the RSL10 Software Development Kit (SDK).” The Energy Harvesting Bluetooth Low Energy Switch is compatiblewith theONSemiconductor IoTDevelopment Kit and Bluetooth Low Energy IoT Development Kit, which include a comprehensive portfolio of sensors, connectivity and actuator devices.

Toshiba Unveils 130nm FFSA™ Development Platform Featuring High Performance, Low Power and Low Cost Structured Array Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced a new 130nm

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