New-Tech Europe | April 2016 | Digital edition

new products

by TI. Building on years of expertise in manufacturing and process technologies, TI creates its GaN devices in a silicon-compatible factoryand qualifies them with practices that are beyond the typical Joint Electron Device Engineering Council (JEDEC) standards to ensure the reliability and robustness of GaN for demanding use cases. Easy-to-use packaging will help increase the adoption of GaN power designs in applications such as power factor controller (PFC) AC/ DC converters, high-voltage DC bus converters and photovoltaic (PV) inverters. Key features and benefits of the LMG3410 Double the power density. The 600- V power stage delivers 50 percent lower power losses in a totem-pole PFC compared with state-of-the-art silicon-based boost power-factor converters. The reduced bill of materials (BOM) count and higher efficiency enable a reduction in power-supply size of as much as 50 percent. Reduced packaging parasitic inductance. The new device’s 8-mm-by-8-mm quad flat no-lead (QFN) package decreases power loss, component voltage stress and electromagnetic interference (EMI) compared to discrete GaN solutions. Enables new topologies. GaN’s zero reverse-recovery charge benefits new switching topologies, including totem-pole PFC and LLC topologies to increase power density and efficiency. Expanding the GaN ecosystem To support designers who are taking advantage of GaN technology in their power designs, TI is also introducing new products to

Creepage package targets open frame power supplies such as TV adapters where dust can enter the case through air vents. These dust particles can reduce the effective creepage between pins over time which may lead to high voltage arcing. The new TO-220 FullPAK Wide Creepage package comes with a pin distance of 4.25 mm instead of the prevailing 2.54 mm found in a standard TO-220 FullPAK package. The other outer dimensions of the new package are almost identical to the TO-220 FullPAK. Additionally, the new Wide Creepage package shows all the well-known benefits of a standard FullPAK, predominantly its excellent isolation behavior as well as the assembly automation ability. Availability TheTO-220FullPAKWideCreepage package is available now. For further information: www.infineon. com/TO220-FP-widecreepage.

samples, making TI the first and only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution. The new 12-A LMG3410 power stage coupled with TI’s analog and digital power-conversion controllers enables designers to create smaller, more efficient and higher- performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications. For more details, see www.ti.com/ lmg3410-pr-eu . “With over 3million hours of reliability testing, the LMG3410 gives power designers the confidence to realize the potential of GaN and to rethink their power architecture and systems in ways not feasible before,” said Steve Lambouses, TI vice president of high-voltage power solutions. “Expanding on TI’s reputation for manufacturing capability and extensive system- design expertise, the new power stage is a significant step for the GaN market.” With its integrateddriverand features such as zero reverse-recovery current, the LMG3410 provides reliable performance, especially in hard-switching applications where it can dramatically reduce switching losses by as much as 80 percent. Unlike stand-alone GaN FETs, the easy-to-use LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection. Proven manufacturing and packaging expertise The LMG3410 is the first semiconductor integrated circuit (IC) to include GaN FETs manufactured

Revolutionize high- performance power conversion with TI’s 600-V GaN FET power stage Building on decades of power- management innovation, Texas Instruments (TI) (NASDAQ: TXN) today announced the availability of 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering

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