New-Tech Europe Magazine | July 2017

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proven, high-volume manufacturing process – enabling us to accelerate transitions from 2D to 3D, MLC to TLC, and now 32-layer to 64-layer products. This next generation of process leadership will enable a smooth, easy migration and validation cycle for our existing data center customers from today’s 32-layer products to 64-layer product extensions. It also enables an expanded product portfolio that supports new business client and embedded products. We have very strong generational synergy in our factories and expect a fast ramp of bit supply based on 64-layer, TLC, 3D NAND by mid-2018. Realizing the promise of the future is about bringing data and compute closer together for a better experience.

memory experience, we’ve optimized the 3D NAND floating gate architecture and manufacturing process. Intel® 3D NAND technology is a floating gate architecture that gives us the world’s best areal density today and provides scalability for the future. This is based upon having a smaller cell size and by placing control logic under the memory array. Having the world’s best areal density means we can scale to large capacity and deliver more gigabytes per wafer. Our experience with designing this architecture into SSD solutions has enabled us to rapidly improve performance, power consumption, performance consistency and reliability with each generation. Additionally, floating gate technology is manufactured on a

LETI AND FRAUNHOFER TEAM UP TO STRENGTHEN MICROELECTRONICS INNOVATION IN FRANCE AND GERMANY

strengths to the task of keeping France and Germany’s microelectronics industries in the forefront – and offer our innovations across Europe.” “Micro-/nanoelectronics and smart systems are key enabling technologies for the economic success of Europe, especially in France and Germany. Thus,

Two leading European research institutes today announced their new collaboration to develop innovative, next-generation microelectronics technologies to spur innovation in their countries and strengthen European strategic and economic sovereignty. Leti, a research institute of CEA Tech in Grenoble, France, and the Berlin-

Europe can no longer afford to scatter its research competences. For the benefit of industry, joining forces will become more and more important, not only for industry but also for RTOs,” Lakner explained. “The new cooperation agreement will be the starting point for a strategic research cooperation of the two countries in order to jointly support the upcoming EC initiative, Important Project of Common European Interest (IPCEI), on micro- and nanoelectronics.” Specific R&D projects that the collaboration will focus on include: Silicon-based technologies for next-generation CMOS processes and products, including design, simulation, unit process and material development as well as production techniques Extended More than Moore technologies for sensing and communication applications Advanced-packaging technologies. The second phase of the collaboration may be expanded with additional academic partners and other countries, as needed.

based Fraunhofer Group for Microelectronics, Europe’s largest R&D provider of smart systems, will initially focus on extending CMOS and More-than-Moore technologies to enable next- generation components for applications in the Internet of Things, augmented reality, automotive, health, aeronautics and other sectors, as well as systems to support French and German industries. The agreement was signed today by Leti CEO Marie Semaria and Fraunhofer Group for Microelectronics Chairman Hubert Lakner during Leti Innovation Days, which are marking Leti’s 50th anniversary. “The ability to, one, develop key enabling technologies that overcome the formidable technical challenges that our leading technology companies will face, and, two, transfer them quickly to industry, is an essential focus for research institutes and industrials in France and Germany,” Semaria said. “Building on our previous, successful collaborations, Leti and the Fraunhofer Group for Microelectronics will bring our complementary

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