New-Tech Europe Magazine | July 2017

new products

Vice President of Marketing at Alliance Memory. “With the introduction of a new B die version, we now have two sources for our 2Gb and 4Gb parts’ silicon. This means our customers can be more confident than ever in our ability to deliver these devices despite shortages and price increases in the memory market.” The DDR architecture of Alliance Memory’s 2Gb and 4Gb DDR3 and DDR3L SDRAMs allows them to achieve extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors for networking, industrial, medical, telecom, and consumer applications — eliminating the need for costly redesigns and part requalification. The 2Gb AS4C128M16D3B-12BCN and 4Gb AS4C256M16D3B-12BCN DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the 4Gb AS4C256M16D3LB-12BCN DDR3L SDRAM operates from a single +1.35V power supply. The devices offer a data mask for write control and are available with a commercial temperature range of 0°C to +95°C. The 4Gb DDR3L SDRAM is also available in an industrial temperature range of -40°C to +95°C. The 2Gb DDR3 SDRAMs are internally configured as eight banks of 16M word x 16 bits, while the 4Gb DDR3 and DDR3L SDRAMs are configured as eight banks of 32M word x 16 bits. All devices support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre- charge initiated at the end of the burst sequence. Easy-to- use refresh functions include auto- or self-refresh. RoHS- compliant, the devices are lead (Pb)- and halogen-free. B die DDR3 and DDR3L SDRAMs are available now, with lead times of four to eight weeks for production quantities. Pricing for U.S. delivery starts at $4.95 per piece in 1,000-piece quantities.

as a monolithic switch. Compared to established smart power switches in the DPAK package, the footprint of the TSDSO-14 is 50 percent smaller. Compared to D²PAK, it is 80 percent smaller. The family enables very efficient driving of high current loads. Also, it reduces power losses in control modules up to 60 percent. With its optimized feature set for 12 V high current loads, including diagnosis and protection, the family addresses a wide range of heating and power distribution applications. These comprise glow plug controller, PTC (Positive Temperature Coefficient) heater, starter relay, horn, trailer node, and auxiliary power outlet. Both families, PROFET+2 and High Current PROFET, are pin-compatible and share the main feature set. Their on-state resistance R DS(ON)scales from 2 mΩ to 200 mΩ. Their load current sense accuracy (k ILIS) below 5 percent at a nominal current is benchmark in the market. Their protection features comprise current tripping, over temperature, overvoltage, load dump and reverse battery capability ReverSave™. Infineon is first in the market to implement reverse battery capability in a monolithic chip. A further benchmark feature is a cranking voltage capability able to work down to 3.1 V.

Alliance Memory Introduces New Die Version for 2Gb and 4Gb DDR3 and DDR3L SDRAMs; Provides New Memory Chip Source in Face of Market Shortages To address the memory market’s shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory today announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package. “Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products,” said TJ Mueller,

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